Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. - Jin He 003; Xing Zhang 002; Ru Huang 001; Yangyuan Wang (Microelectron. Reliab., 2001)

Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. - Jin He 003; Xing Zhang 002; Ru Huang 001; Yangyuan Wang (Microelectron. Reliab., 2002)

Practical compact modeling approaches and options for sub-0.1 mum CMOS technologies. - Mansun Chan; Xuemei Xi; Jin He 003; Kanyu M. Cao; Mohan V. Dunga; Ali M. Niknejad; Ping K. Ko; Chenming Hu (Microelectron. Reliab., 2003)

Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. - Ru Huang 001; Jinyan Wang; Jin He 003; Min Yu; Xing Zhang 002; Yangyuan Wang (Microelectron. Reliab., 2003)

The next generation BSIM for sub-100nm mixed-signal circuit simulation. - Xuemei Xi; Jin He 003; Mohan V. Dunga; Chung-Hsun Lin; Babak Heydari; Hui Wan 003; Mansun Chan; Ali M. Niknejad; Chenming Hu (CICC, 2004)

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach. - Jin He 003; Xuemei Xi; Mansun Chan; Chung-Hsun Lin; Ali M. Niknejad; Chenming Hu (ISQED, 2004)

Charge-Based Core and the Model Architecture of BSIM5. - Jin He 003; Jane Xi; Mansun Chan; Hui Wan 003; Mohan V. Dunga; Babak Heydari; Ali M. Niknejad; Chenming Hu (ISQED, 2005)

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. - Jin He 003; Xing Zhang 002; Ganggang Zhang; Mansun Chan; Yangyuan Wang (ISQED, 2006)

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. - Jin He 003; Xing Zhang 002; Ganggang Zhang; Yangyuan Wang (ISQED, 2006)

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure. - Yue Fu; Jin He 003; Feng Liu; Jie Feng; Chenyue Ma; Lining Zhang (ISQED, 2008)

Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. - Feng Liu; Jin He 003; Yue Fu; Jinhua Hu; Wei Bian; Yan Song; Xing Zhang 002; Mansun Chan (ISQED, 2008)

A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. - Chenyue Ma; Bo Li; Lining Zhang; Jin He 003; Xing Zhang 002; Xinnan Lin; Mansun Chan (ISQED, 2009)

An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport. - Lining Zhang; Jin He 003; Jian Zhang; Feng Liu; Yue Fu; Yan Song; Xing Zhang 002 (ISQED, 2009)

Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs. - Wei Bian; Jin He 003; Lining Zhang; Jian Zhang; Mansun Chan (Microelectron. Reliab., 2009)

A High Power Switch-Mode LED Driver with an Efficient Current Sensing Scheme. - Wing Yan Leung; Tsz Yin Man; Dongwei Zhang; Jin He 003; Mansun Chan (J. Low Power Electron., 2010)

Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. - Chenyue Ma; Hao Wang 011; Chenfei Zhang; Xiufang Zhang; Jin He 003; Xing Zhang 002 (Microelectron. Reliab., 2010)

Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect. - Lining Zhang; Jian Zhang; Yan Song; Xinnan Lin; Jin He 003; Mansun Chan (Microelectron. Reliab., 2010)

A new nonlinear parameterized model order reduction technique combining the interpolation method and Proper Orthogonal Decomposition. - Zhiyu Xu; Xinnan Lin; Hao Zhuang; Bo Jiang; Haijun Lou; Jin He 003 (ASICON, 2011)

Terahertz spectroscopic uncertainty analysis for explosive mixture components determination using multi-objective micro-genetic algorithm. - Yi Chen; Yong Ma; Zheng Lu; Lixia Qiu; Jin He 003 (Adv. Eng. Softw., 2011)

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. - Chenyue Ma; Lining Zhang; Chenfei Zhang; Xiufang Zhang; Jin He 003; Xing Zhang 002 (Microelectron. Reliab., 2011)

A MATLAB program for Volterra distortion analysis in CMOS switched source follower. - Hailang Liang; Jin He 003; Cheng Wang; Xiaoan Zhu; Mansun Chan (APCCAS, 2012)

A physical design tool for carbon nanotube field-effect transistor circuits. - Jiale Huang; Minhao Zhu; Shengqi Yang; Pallav Gupta; Wei Zhang 012; Steven M. Rubin; Gilda Garretón; Jin He 003 (ACM J. Emerg. Technol. Comput. Syst., 2012)

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. - Chenyue Ma; Hans Jürgen Mattausch; Masataka Miyake; Takahiro Iizuka; Kazuya Matsuzawa; Seiichiro Yamaguchi; Teruhiko Hoshida; Akinori Kinoshita; Takahiko Arakawa; Jin He 003; Mitiko Miura-Mattausch (IEICE Trans. Electron., 2013)

A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS. - Khawar Sarfraz; Jin He 003; Mansun Chan (IEEE J. Solid State Circuits, 2017)

A Passive Optical Transmitter Using LC Switches for IoT Smart Dusts. - Jingjing Liu 003; Riqing Chen; Yuan Ren; Zhongting Xu; Guoqing Hu; Jun Pan; Chunlai Li; Jin He 003 (CCECE, 2019)

Synthesis Design of Equal-Ripple and Quasi-Elliptic Wideband BPFs With Independently Reconfigurable Lower Passband Edge. - Xiao-Meng Wang; Xiao-Kun Bi; Shao-Hua Guo; Jin He 003; Chun-Lai Li; Jingjing Liu 003; Guo-Qing Hu; Guang-Jin Ma; Zhongting Xu (IEEE Access, 2020)

Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review. - Laixiang Qin; Chunlai Li; Yiqun Wei; Guoqing Hu; Jingbiao Chen; Yi Li; Caixia Du; Zhangwei Xu; Xiumei Wang; Jin He 003 (IEEE Access, 2023)