Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure. - Daigo Kikuta; Jin-Ping Ao; Yasuo Ohno (IEICE Trans. Electron., 2005)

A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET. - Daigo Kikuta; Jin-Ping Ao; Junya Matsuda; Yasuo Ohno (IEICE Trans. Electron., 2006)

Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage. - Masaya Okada; Ryohei Takaki; Daigo Kikuta; Jin-Ping Ao; Yasuo Ohno (IEICE Trans. Electron., 2006)

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress. - Jin-Ping Ao; Yuya Yamaoka; Masaya Okada; Cheng-Yu Hu; Yasuo Ohno (IEICE Trans. Electron., 2008)

A Study on Ohmic Contact to Dry-Etched p-GaN. - Cheng-Yu Hu; Jin-Ping Ao; Masaya Okada; Yasuo Ohno (IEICE Trans. Electron., 2008)

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer. - Cheng-Yu Hu; Katsutoshi Nakatani; Hiroji Kawai; Jin-Ping Ao; Yasuo Ohno (IEICE Trans. Electron., 2010)

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection. - Yusuke Ikawa; Yorihide Yuasa; Cheng-Yu Hu; Jin-Ping Ao; Yasuo Ohno (IEICE Trans. Electron., 2010)

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor. - Liang He; Yiqiang Ni; Liuan Li; Zhiyuan He; Xiaobo Li; Taofei Pu; Jin-Ping Ao (IEICE Electron. Express, 2021)