High-Voltage Analog System for a Mobile NAND Flash. - Yong Hoon Kang; Jin-Kook Kim; Sang Won Hwang; Joon Young Kwak; Jun-Yong Park; Daeyong Kim; Chan Ho Kim; Jong-Yeol Park; Yong-Taek Jeong; Jong Nam Baek; Su Chang Jeon; Pyungmoon Jang; et al. (IEEE J. Solid State Circuits, 2008)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. - Seungjae Lee 001; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim 004; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (ISSCC, 2016)

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. - Chulbum Kim; Doo-Hyun Kim; Woopyo Jeong; Hyun-Jin Kim; Il-Han Park; Hyun Wook Park; Jong-Hoon Lee; Jiyoon Park; Yang-Lo Ahn; Ji Young Lee; Seungbum Kim; Hyun-Jun Yoon; et al. (IEEE J. Solid State Circuits, 2018)

Machine Learning-Based Automatic Generation of eFuse Configuration in NAND Flash Chip. - Jisuk Kim; Jinyub Lee; Sungjoo Yoo (ITC, 2019)

A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface. - Tongsung Kim; Anil Kavala; Hyunsuk Kang; Youngmin Jo; Jungjune Park; Kyoungtae Kang; Byung-Kwan Chun; Dong-Ho Shin; Dong-Su Jang; Byunghoon Jeong; Chiweon Yoon; Jinyub Lee; et al. (A-SSCC, 2021)

Issues and Key Technologies for Next Generation 3D NAND. - Chiweon Yoon; Hyunggon Kim; Seon-Kyoo Lee; Jinyub Lee; Jai Hyuk Song (ICEIC, 2021)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. - Dae-Hoon Na; Jang-Woo Lee; Seon-Kyoo Lee; Hwasuk Cho; Junha Lee; Manjae Yang; Eunjin Song; Anil Kavala; Tongsung Kim; Dong-Su Jang; Youngmin Jo; Ji-Yeon Shin; et al. (IEEE J. Solid State Circuits, 2021)

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory. - Wandong Kim; Dae-Seok Byeon; Sung-Min Joe; Jinyub Lee; Jai Hyuk Song (ICEIC, 2022)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)

A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. - Youngmin Jo; Anil Kavala; Tongsung Kim; Byung-Kwan Chun; Jungjune Park; Taesung Lee; Jungmin Seo; Manjae Yang; Taehyeon Park; Hyunjin Kwon; Cheolhui Lee; Younghoon Son; et al. (VLSI Technology and Circuits, 2023)

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. - Wontaeck Jung; Hyunggon Kim; Do-Bin Kim; Tae-Hyun Kim; Nam-Hee Lee; Dongjin Shin; Minyoung Kim; Youngsik Rho; Hun-Jong Lee; Yujin Hyun; Jaeyoung Park; Taekyung Kim; et al. (ISSCC, 2024)