11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. - Seungjae Lee 001; Chulbum Kim; Minsu Kim 004; Sung-Min Joe; Joonsuc Jang; Seungbum Kim; Kangbin Lee; Jisu Kim; Jiyoon Park; Hanjun Lee; Min-Seok Kim; Seonyong Lee; et al. (ISSCC, 2018)

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. - Chulbum Kim; Doo-Hyun Kim; Woopyo Jeong; Hyun-Jin Kim; Il-Han Park; Hyun Wook Park; Jong-Hoon Lee; Jiyoon Park; Yang-Lo Ahn; Ji Young Lee; Seungbum Kim; Hyun-Jun Yoon; et al. (IEEE J. Solid State Circuits, 2018)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)