The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content. - Jinfeng Zhang; Yue Hao 001; Jincheng Zhang 001; JinYu Ni (Sci. China Ser. F Inf. Sci., 2008)

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. - Jincheng Zhang 001; Zhiming Li; Yue Hao 001; Hao Wang; Peixian Li (Sci. China Inf. Sci., 2010)

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. - Wei-Wei Chen; Xiaohua Ma 001; Bin Hou; Sheng-Lei Zhao; Jiejie Zhu; Jincheng Zhang 001; Yue Hao 001 (Microelectron. Reliab., 2014)

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. - Xiangdong Li; Weihang Zhang; Mengdi Fu; Jincheng Zhang 001; Haiqing Jiang; Zhenxing Guo; Yu Zou; Renyuan Jiang; Zuo-Chen Shi; Yue Hao 001 (IEICE Electron. Express, 2015)

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. - Yingzhe Wang; Xuefeng Zheng; Jiaduo Zhu; Shengrui Xu; Xiaohua Ma 001; Jincheng Zhang 001; Yue Hao 001; Linlin Xu; Jiangnan Dai; Peixian Li (IRPS, 2020)

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. - Shuang Liu; Xiufeng Song; Jincheng Zhang 001; Sheng-Lei Zhao; Jun Luo; Hong Zhang; Yachao Zhang 002; Weihang Zhang; Hong Zhou; Zhihong Liu; Yue Hao 001 (IEEE Access, 2020)

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. - Zeyang Ren; Qi He; Jiamin Xu; Guansheng Yuan; Jinfeng Zhang; Jincheng Zhang 001; Kai Su; Yue Hao 001 (IEEE Access, 2020)

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. - Kai Su; Zeyang Ren; Yue Peng; Jinfeng Zhang; Jincheng Zhang 001; Yachao Zhang 002; Qi He; Chunfu Zhang; Yue Hao 001 (IEEE Access, 2020)

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. - Kui Dang; Jincheng Zhang 001; Hong Zhou; Shan Yin; Tao Zhang 090; Jing Ning; Yachao Zhang 002; Zhaoke Bian; Jiabo Chen; Xiaoling Duan; Sheng-Lei Zhao; Yue Hao 001 (IEEE Trans. Ind. Electron., 2020)

All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors. - Yanshuang Ba; Sunjie HuangFu; Miaomiao Li; Junxiao Ma; Weidong Zhu; Dazheng Chen; He Xi; Jincheng Zhang 001; Chunfu Zhang; Yue Hao 001 (ASICON, 2021)

Recent progress of integrated circuits and optoelectronic chips. - Yue Hao 001; Shuiying Xiang; Genquan Han; Jincheng Zhang 001; Xiaohua Ma 001; Zhangming Zhu; Xingxing Guo; Yahui Zhang; Yanan Han; Ziwei Song; Yan Liu; Ling Yang 003; et al. (Sci. China Inf. Sci., 2021)

Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping. - Xin Gan; Yueying Zhang; Yupeng Hui; Shaoxuan Liu; Lei Wang; Jincheng Zhang 001; Yue Hao 001; Haijiao Harsan Ma (Adv. Intell. Syst., 2022)

Unidirectional p-GaN gate HEMT with composite source-drain field plates. - Haiyong Wang; Wei Mao; Shenglei Zhao; Yuanhao He; Jiabo Chen; Ming Du; Xuefeng Zheng; Chong Wang; Chunfu Zhang; Jincheng Zhang 001; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. - Yinhe Wu; Jincheng Zhang 001; Shenglei Zhao; Zhaoxi Wu; Zhongxu Wang; Bo Mei; Chao Duan; Dujun Zhao; Weihang Zhang; Zhihong Liu; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. - Dujun Zhao; Zhaoxi Wu; Chao Duan; Bo Mei; Zhongyang Li; Zhongxu Wang; Qing Tang; Qing Yang; Yinhe Wu; Weihang Zhang; Zhihong Liu; Shenglei Zhao; et al. (Sci. China Inf. Sci., 2022)

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. - Pengfei Dong; Chenlu Wang; Qinglong Yan; Yingming Wang; Jian Wang; Sami Alghamdi; Zhihong Liu; Jincheng Zhang 001; Hong Zhou; Yue Hao 001 (DRC, 2023)

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. - Sheng-Lei Zhao; Jincheng Zhang 001; Yachao Zhang 002; Lansheng Feng; Shuang Liu; Xiufeng Song; Yixin Yao; Jun Luo; Zhihong Liu; Shengrui Xu; Yue Hao 001 (Sci. China Inf. Sci., 2023)

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. - Ren Huang; Weihang Zhang; Jincheng Zhang 001; Chunxu Su; Xi Liu; Liyu Fu; Yue Hao 001 (Sci. China Inf. Sci., 2023)

$ beta$-Ga2O3-on-SiC RF MOSFETs $ beta$. - Min Zhou; Hong Zhou; Jincheng Zhang 001; Yue Hao 001 (TENCON, 2024)

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. - Min Zhou; Hong Zhou; Mengwei Si; Guangjie Gao; Xiaojin Chen; Xiaoxiao Zhu; Kui Dang; Peijun Ma; Xiaohua Ma 001; Xuefeng Zheng; Zhihong Liu; Jincheng Zhang 001; et al. (VLSI Technology and Circuits, 2024)

Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design. - Wei Zhu; Yi-Xing He; Hao-Nan Li; Xian-Qin Liu; Siwen Zhang; Lei Wang; Jiang Zhu; Yue-Qi Wang; Jincheng Zhang 001; Yue Hao 001; Haijiao Harsan Ma (IEEE Access, 2024)

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. - Kui Dang; Zhilin Qiu; Shudong Huo; Peng Zhan; Huining Liu; Yachao Zhang 002; Jing Ning; Hong Zhou; Jincheng Zhang 001 (Sci. China Inf. Sci., 2024)

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. - Hanghai Du; Lu Hao; Zhihong Liu; Zeyu Song; Yachao Zhang 002; Kui Dang; Jin Zhou; Jing Ning; Zan Li; Jincheng Zhang 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Two-dimensional materials for future information technology: status and prospects. - Hao Qiu; Zhihao Yu; Tiange Zhao; Qi Zhang; Mingsheng Xu; Peifeng Li; Taotao Li; Wenzhong Bao; Yang Chai; Shula Chen; Yiqi Chen; Hui-Ming Cheng; et al. (Sci. China Inf. Sci., 2024)

A 12V-to-1V Outphase-Interleaved SC Hybrid Converter With Enhanced Inductor De-Energizing Slew Rate and Adaptive Deadtime Control. - Xiongjie Zhang; Xinman Li; Anyang Zhao; Yang Jiang 002; Weihang Zhang; Jincheng Zhang 001; Rui Paulo Martins; Pui-In Mak (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. - Yitao Feng; Hong Zhou; Sami Alghamdi; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Saud Wasly; Yue Hao 001; Jincheng Zhang 001 (Sci. China Inf. Sci., 2025)

Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters. - Longyang Yu; Sheng-Lei Zhao; Xuejing Sun; Wei Mu; Xiufeng Song; Shuzhen You; Yue Hao 001; Jincheng Zhang 001 (IEEE Trans. Ind. Electron., 2025)

2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time. - Yitao Feng; Hong Zhou; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Yue Hao 001; Jincheng Zhang 001 (Sci. China Inf. Sci., 2026)

First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs. - Jincheng Zhang 001; Shudong Huo; Zhengxing Zhang; Mengjiao Xiang; Menghan Zheng; Shen Liu; Yachao Zhang 002; Xiufeng Song; Hong Zhou; Kui Dang; Jing Ning; Yue Hao 001 (Sci. China Inf. Sci., 2026)

Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. - Yan-Ning Zhang 001; Haidi Wu; Haoran Zhang; Shiyu Li; Xinchen Ji; Zhichun Yang; Xinbo Zhang; Ling Bai; Juncheng Zheng; Dong Wang; Yue Hao 001; Jing Ning; et al. (Sci. China Inf. Sci., 2026)

Design and Optimization of Fractional-Turn Transformer With Low Core Loss and Profile. - Wenbao Han; Sheng-Lei Zhao; Longyang Yu; Shouzheng Zhang; Fangzuo Zhao; Haobin Wei; Daoyuan Li; Xuejing Sun; Wei Mu; Zheyuan Yu; Shuzhen You; Yue Hao 001; et al. (IEEE Trans. Ind. Electron., 2026)