Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. - David C. T. Or; Pui-To Lai; Johnny K. O. Sin; Paul C. K. Kwok; Jing-Ping Xu (Microelectron. Reliab., 2003)

Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene. - Pui-To Lai; Jing-Ping Xu; H. P. Wu; C. L. Chan (Microelectron. Reliab., 2004)

Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. - W. B. Chen; Jing-Ping Xu; Pui-To Lai; Y. P. Li; S. G. Xu (Microelectron. Reliab., 2007)

A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. - X. Zou; Jing-Ping Xu; C. X. Li; Pui-To Lai; W. B. Chen (Microelectron. Reliab., 2007)

A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric. - F. Ji; Jing-Ping Xu; Pui-To Lai; J. G. Guan (Microelectron. Reliab., 2008)

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. - C. X. Li; X. Zou; Pui-To Lai; Jing-Ping Xu; C. L. Chan (Microelectron. Reliab., 2008)

Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric. - Jing-Ping Xu; F. Ji; Pui-To Lai; J. G. Guan (Microelectron. Reliab., 2008)

A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects. - Jing-Ping Xu; Y. P. Li; Pui-To Lai; W. B. Chen; S. G. Xu; J. G. Guan (Microelectron. Reliab., 2008)

A study on the improved programming characteristics of flash memory with Si3N4/SiO2 stacked tunneling dielectric. - Lu Liu; Jing-Ping Xu; L. L. Chen; Pui To Lai (Microelectron. Reliab., 2009)

A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode. - Jing-Ping Xu; X. Xiao; Pui-To Lai (Microelectron. Reliab., 2010)

Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory. - J. X. Chen; Jing-Ping Xu; Lu Liu; X. D. Huang; Pui To Lai (Microelectron. Reliab., 2014)

A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. - Y. Huang; Jing-Ping Xu; L. S. Wang; S. Y. Zhu (Microelectron. Reliab., 2015)

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. - Feng Ji; Jing-Ping Xu; Lu Liu; Wing Man Tang; Pui To Lai (Microelectron. Reliab., 2016)

Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. - Han-Han Lu; Jing-Ping Xu; Lu Liu; Li-Sheng Wang; Pui To Lai; Wing Man Tang (Microelectron. Reliab., 2016)