Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions. - Qinsong Qian; Weifeng Sun; Jing Zhu 006; Longxing Shi (Microelectron. Reliab., 2010)

A novel Operational Transconductance Amplifier with high Gm using improved differential current redistribution technique (DCRT). - Jing Zhu 006; Yunwu Zhang; Weifeng Sun; Shengli Lu (ASICON, 2013)

Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time. - Jian Chen; Jing Zhu 006; Guodong Sun; Weifeng Sun; Weinan Dai; Zexiang Huang (IET Circuits Devices Syst., 2014)

Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors. - Jing Zhu 006; Yunwu Zhang; Weifeng Sun; Yangbo Yi (IET Circuits Devices Syst., 2014)

Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. - Jing Zhu 006; Yunwu Zhang; Weifeng Sun; Yangyang Lu; Yicheng Du; Yangbo Yi (IET Circuits Devices Syst., 2016)

Noise Immunity and its Temperature Characteristics Study of the Capacitive-Loaded Level Shift Circuit for High Voltage Gate Drive IC. - Jing Zhu 006; Yunwu Zhang; Weifeng Sun; Yangyang Lu; Longxing Shi; Yan Gu; Sen Zhang (IEEE Trans. Ind. Electron., 2018)

33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving. - Jing Zhu 006; Ding Yan; Siyuan Yu; Weifeng Sun; Gang Shi; Siyang Liu 002; Sen Zhang (ISSCC, 2021)

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices. - Jing Zhu 006; Siyuan Yu; Yangyang Lu; Weifeng Sun; Chuanyi Cheng; Ding Yan; Yunwu Zhang; Shaohong Li; Long Zhang; Sen Zhang; Nailong He; Yan Gu (IEEE Trans. Ind. Electron., 2021)

Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit. - Jing Zhu 006; Siyuan Yu; Guichuang Zhu; Weifeng Sun; Yunqi Wang; Yangyang Lu; Yunwu Zhang; Sen Zhang; Yan Gu; Nailong He (IEEE Trans. Ind. Electron., 2021)

A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity. - Siyuan Yu; Qi Zhou; Gang Shi; Tianyang Wu; Jing Zhu 006; Long Zhang; Weifeng Sun; Sen Zhang; Nailong He; Ye Li (IEEE Trans. Ind. Electron., 2023)

A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dVS/dt Noise Immunity Enhancement Structure. - Yifei Zheng; Boyu Li; Qianheng Dong; Yutao Ying; Deyuan Song; Jing Zhu 006; Weifeng Sun; Qinsong Qian; Long Zhang; Sheng Li; Denggui Wang; Jianjun Zhou (IEEE Trans. Very Large Scale Integr. Syst., 2024)