Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Two-dimensional materials for future information technology: status and prospects. - Hao Qiu; Zhihao Yu; Tiange Zhao; Qi Zhang; Mingsheng Xu; Peifeng Li; Taotao Li; Wenzhong Bao; Yang Chai; Shula Chen; Yiqi Chen; Hui-Ming Cheng; et al. (Sci. China Inf. Sci., 2024)