5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)

A 64Mpixel CMOS Image Sensor with 0.50µm Unit Pixels Separated by Front Deep-Trench Isolation. - Sungbong Park; Changkyu Lee; Sangcheon Park; Haeyong Park; Taeheon Lee; Dami Park; Minsung Heo; Inyong Park; Hyunyoung Yeo; Youna Lee; Juhee Lee; Beomsuk Lee; et al. (ISSCC, 2022)