Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices. - Soonyoung Lee; Ilgon Kim; Sungmock Ha; Cheong-sik Yu; Jinhyun Noh; Sangwoo Pae; Jongwoo Park 001 (IRPS, 2015)

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. - Jinhyun Noh; Mengwei Si; Hong Zhou; Marko J. Tadjer; Peide D. Ye (DRC, 2018)

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. - Pai-Ying Liao; Sami Alajlouni; Mengwei Si; Zhuocheng Zhang; Zehao Lin; Jinhyun Noh; Calista Wilk; Ali Shakouri; Peide D. Ye (VLSI Technology and Circuits, 2022)