Single Event Resilient Dynamic Logic Designs. - Haibin Wang; Mulong Li; Li Chen 001; Rui Liu 011; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong; Rita Fung; Jinshun Bi (J. Electron. Test., 2014)

A Novel Built-in Current Sensor for N-WELL SET Detection. - Haibin Wang; Rui Liu 011; Li Chen 001; Jinshun Bi; Mulong Li; Yuanqing Li (J. Electron. Test., 2015)

Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. - Haohao Zhang; Jinshun Bi; Haibin Wang; Hongyang Hu; Jin Li; Lanlong Ji; Ming Liu 022 (Microelectron. Reliab., 2016)

A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range. - Feng Zhang 014; Dongyu Fan; Yuan Duan; Jin Li; Cong Fang 002; Yun Li; Xiaowei Han; Lan Dai; Cheng-Ying Chen; Jinshun Bi; Ming Liu 022; Meng-Fan Chang (A-SSCC, 2017)

Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. - Yannan Xu; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Ming Liu 022 (Sci. China Inf. Sci., 2017)

SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology. - Haibin Wang; Ao Sheng; Shiqi Wang 010; Jinshun Bi; Li Chen 001; Xiaofeng Liu 006 (Microelectron. Reliab., 2017)

Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory. - Jinshun Bi; Yuan Duan; Kai Xi; Bo Li 051 (Microelectron. Reliab., 2018)

A single event upset tolerant latch design. - Haibin Wang; Xixi Dai; Yangsheng Wang; Issam Nofal; Li Cai; Zicai Shen; Wanxiu Sun; Jinshun Bi; Bo Li 051; Gang Guo; Li Chen 001; Sang H. Baeg (Microelectron. Reliab., 2018)

The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. - Teng Zhang; Bruno Allard; Jinshun Bi (Microelectron. Reliab., 2018)

Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies. - Jinshun Bi (ICICDT, 2019)

Total ionizing dose effects on graphene-based charge-trapping memory. - Kai Xi; Jinshun Bi; Sandip Majumdar; Bo Li 051; Jing Liu 035; Yannan Xu; Ming Liu 022 (Sci. China Inf. Sci., 2019)

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. - Gangping Yan; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Linjie Fan; Huaxiang Yin (IEEE Access, 2020)

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. - Guoliang Tian; Jinshun Bi; Gaobo Xu; Kai Xi; Xueqin Yang; Sandip Majumdar; Huaxiang Yin; Qiuxia Xu; Wenwu Wang 006 (Sci. China Inf. Sci., 2020)

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. - Linjie Fan; Jinshun Bi; Kai Xi; Sandip Majumdar; Bo Li 051 (Sensors, 2020)

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations. - Linjie Fan; Jinshun Bi; Kai Xi; Gangping Yan (Sensors, 2020)

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. - Jianjian Wang; Jinshun Bi; Gang Liu; Hua Bai; Kai Xi; Bo Li 051; Sandip Majumdar; Lanlong Ji; Ming Liu 022; Zhangang Zhang (Sci. China Inf. Sci., 2021)

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. - Xueqin Yang; Yannan Xu; Jinshun Bi; Kai Xi; Linjie Fan; Lanlong Ji; Gaobo Xu (Sci. China Inf. Sci., 2022)

Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing. - Qiang Wang 025; Yankun Wang; Ren Luo; Jianjian Wang; Lanlong Ji; Zhuangde Jiang; Christian Wenger; Zhitang Song; Sannian Song; Wei Ren; Jinshun Bi; Gang Niu 006 (Neuromorph. Comput. Eng., 2022)

Nanoscale Air Channel Devices for Emerging IC Applications. - Jinshun Bi (ICICDT, 2023)