Active defects in MOS devices on 4H-SiC: A critical review. - Hamid Amini Moghadam; Sima Dimitrijev; Jisheng Han; Daniel Haasmann (Microelectron. Reliab., 2016)

Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. - Xinyu Wang; Dengwen Yuan; Shicheng Zhu; Xiyao Huang; Yaxin Li; Lei Ge; Yingxin Cui; Mingsheng Xu; Yu Zhong; Xiaobo Hu; Kuan Yew Cheong; Xiangang Xu; et al. (Microelectron. J., 2025)

Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. - Tianlu Wang; Yu Zhong; Lan Luo; Fanpeng Zeng; Ziang Zhao; Yingxin Cui; Mingsheng Xu; Xiangang Xu; Handoko Linewih; Jisheng Han (Microelectron. J., 2025)