A Disturb-Free 10T SRAM Cell with High Read Stability and Write Ability for Ultra-Low Voltage Operations. - Jiubai Zhang; Yajuan He; Xiaoqing Wu; Bo Zhang 027 (APCCAS, 2018)

A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations. - Jiubai Zhang; Xiaoqing Wu; Xilin Yi; Jiaxun Lv; Yajuan He (ISCAS, 2019)

A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations. - Yajuan He; Jiubai Zhang; Xiaoqing Wu; Xin Si; Shaowei Zhen; Bo Zhang 027 (IEEE Trans. Very Large Scale Integr. Syst., 2019)