Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology. - Jizuo Zhang; Jianjun Chen; Pengcheng Huang 003; Shouping Li; Liang Fang (Microelectron. Reliab., 2018)

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking. - Jizuo Zhang; Liang Fang; Jianjun Chen; Shen Hou; Xianyu Tong (IEEE Access, 2019)

Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM. - Cheng Xie; Yueyue Chen; Jianjun Chen; Jizuo Zhang (Sci. China Inf. Sci., 2019)

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. - Jizuo Zhang; Jianjun Chen; Pengcheng Huang; Shouping Li; Liang Fang (Symmetry, 2019)