Gate-controlled doping in carbon-based FETs. - Joachim Knoch; Thomas Grap; Marcel Müller (VLSI-SoC, 2013)

The engineering challenges in quantum computing. - Carmen G. Almudéver; Lingling Lao; Xiang Fu 003; Nader Khammassi; Imran Ashraf; Dan Iorga; Savvas Varsamopoulos; Christopher Eichler; Andreas Wallraff; Lotte Geck; Andre Kruth; Joachim Knoch; et al. (DATE, 2017)

Buried multi-gate InAs-nanowire FETs. - Thomas Grap; Felix Riederer; Charu Gupta; Joachim Knoch (ESSDERC, 2017)

A novel approach for scalable sensor arrays using cantilever field-effect transistors. - Andreas Hessel; Stefan Scholz; Alexander Pelger; Albert Pfander; Joachim Knoch (ESSDERC, 2017)

NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. - Melvin Galicia; Stephan Menzel; Farhad Merchant; Maximilian Müller; Hsin-Yu Chen; Qing-Tai Zhao; Felix Cüppers; Abdur R. Jalil; Qi Shu; Peter Schüffelgen; Gregor Mussler; Carsten Funck; et al. (DATE, 2022)

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. - Soundarya Nagarajan; Daniel Hiller; Ingmar Ratschinski; Joachim Knoch; Thomas Mikolajick; Jens Trommer (DRC, 2023)

Multiscale modelling of MEMS based Pirani gauges. - Prafullkrishna Dani; Jochen Franz; Joachim Knoch (SMACD, 2023)

High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. - Yi Han; Jingxuan Sun; Jin Hee Bae; Detlev Grützmacher; Joachim Knoch; Qing-Tai Zhao (VLSI Technology and Circuits, 2023)