Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. - Joachim Würfl; Paul Kurpas; Frank Brunner; Michael Mai; Matthias Rudolph; Markus Weyers (Microelectron. Reliab., 2001)

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. - Frank Brunner; A. Braun; Paul Kurpas; J. Schneider; Joachim Würfl; Markus Weyers (Microelectron. Reliab., 2003)

Reliability Investigation of Gallium Nitride HEMT. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; V. Hoel; Sylvain L. Delage; N. Chaturvedi; Richard Lossy; Joachim Würfl (Microelectron. Reliab., 2004)

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. - Arkadiusz Glowacki; Piotr Laskowski; Christian Boit; Ponky Ivo; Eldad Bahat-Treidel; Reza Pazirandeh; Richard Lossy; Joachim Würfl; Günther Tränkle (Microelectron. Reliab., 2009)

Determination of GaN HEMT reliability by monitoring IDSS. - Reza Pazirandeh; Joachim Würfl; Günther Tränkle (Microelectron. Reliab., 2010)

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. - Ponky Ivo; Arkadiusz Glowacki; Eldad Bahat-Treidel; Richard Lossy; Joachim Würfl; Christian Boit; Günther Tränkle (Microelectron. Reliab., 2011)

Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

Reliability studies on GaN HEMTs with sputtered Iridium gate module. - Richard Lossy; Hervé Blanck; Joachim Würfl (Microelectron. Reliab., 2012)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. - Sergey A. Chevtchenko; Matthias Schulz; Eldad Bahat-Treidel; Wilfred John; Stephan Freyer; Paul Kurpas; Joachim Würfl (Microelectron. Reliab., 2014)

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. - Ponky Ivo; Eunjung Melanie Cho; Przemyslaw Kotara; Lars Schellhase; Richard Lossy; Ute Zeimer; Anna Mogilatenko; Joachim Würfl; Günther Tränkle; Arkadiusz Glowacki; Christian Boit (Microelectron. Reliab., 2014)

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. - Mattia Capriotti; Clément Fleury; Ole Bethge; Matteo Rigato; Suzanne Lancaster; Dionyz Pogany; Gottfried Strasser; Eldad Bahat-Treidel; Oliver Hilt; Frank Brunner; Joachim Würfl (ESSDERC, 2015)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Mattia Capriotti; Matteo Rigato; Oliver Hilt; Joachim Würfl; Joff Derluyn; Stephan Steinhauer; Anton Köck; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2015)

Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. - Eldad Bahat-Treidel; Oliver Hilt; O. Bahat Treidel; Joachim Würfl (Microelectron. Reliab., 2016)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. - Nidhi Chaturvedi; Richard Lossy; Kuldip Singh; Dheeraj K. Kharbanda; Shivanshu Mishra; Ashok Chauhan; Kaushal Kishore; Pramod K. Khanna; Joachim Würfl (IEEE SENSORS, 2018)

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. - Eldad Bahat-Treidel; Oliver Hilt; H. Christopher; A. Klehr; A. Ginolas; A. Liero; Joachim Würfl (DRC, 2020)

GaN-channel HEMTs with AlN buffer for high-voltage switching. - Oliver Hilt; Frank Brunner; Eldad Bahat-Treidel; Mihaela Wolf; Joachim Würfl (DRC, 2021)

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications. - Yi-Fan Tsao; Heng-Shou Hsu; Joachim Würfl; Heng-Tung Hsu (IEEE Access, 2022)