Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. - Joan Marc Rafí; B. Vergnet; Francesca Campabadal; Celeste Fleta; Luis Fonseca; Manuel Lozano 003; C. Martínez; Miguel Ullán (Microelectron. Reliab., 2002)

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; Abdelkarim Mercha; Eddy Simoen; Cor Claeys; Joan Marc Rafí; Michael Kokkoris (Microelectron. Reliab., 2004)

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; S. Kuboyama; S. Matsuda; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2005)

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. - Kiyoteru Hayama; Kenichiro Takakura; K. Shigaki; Hidenori Ohyama; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2006)

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. - Joan Marc Rafí; Eddy Simoen; Kiyoteru Hayama; Abdelkarim Mercha; Francesca Campabadal; Hidenori Ohyama; Cor Claeys (Microelectron. Reliab., 2006)

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness. - Joan Marc Rafí; M. B. González; Kenichiro Takakura; I. Tsunoda; M. Yoneoka; Oihane Beldarrain; Miguel Zabala; Francesca Campabadal (Microelectron. Reliab., 2013)