High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. - Laurent Breuil; L. Nyns; S. Rachidi; K. Banerjee; Antonio Arreghini; J. P. Bastos; S. Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations. - Alessio Spessot; Shairfe Muhammad Salahuddin; Ricardo Escobar; Romain Ritzenthaler; Yang Xiang; Rahul Budhwani; Eugenio Dentoni Litta; Elena Capogreco; Joao P. Bastos; Yangyin Chen; Naoto Horiguchi (IMW, 2022)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. - Romain Ritzenthaler; Elena Capogreco; E. Dupuy; Hiroaki Arimura; J. P. Bastos; P. Favia; F. Sebaai; D. Radisic; V. T. H. Nguyen; G. Mannaert; B. T. Chan; V. Machkaoutsan; et al. (VLSI Technology and Circuits, 2022)

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. - J. P. Bastos; Barry J. O'Sullivan; Yusuke Higashi; Adrian Vaisman Chasin; Jacopo Franco; Hiroaki Arimura; J. Ganguly; Elena Capogreco; Alessio Spessot; N. Horiguchi (IRPS, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. - J. P. Bastos; Jacopo Franco; Barry J. O'Sullivan; Yusuke Higashi; Adrian Chasin; J. Ganguly; Hiroaki Arimura; Alessio Spessot; M.-S. Kim; N. Horiguchi (IRPS, 2025)

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT. - Simon Van Beek; Adrian Vaisman Chasin; Subhali Subhechha; Harold Dekkers; Nouredine Rassoul; Yiqun Wan; Hongwei Tang; Joao P. Bastos; Attilio Belmonte; Gouri Sankar Kar (IRPS, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)