Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Mattia Capriotti; Matteo Rigato; Oliver Hilt; Joachim Würfl; Joff Derluyn; Stephan Steinhauer; Anton Köck; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2015)

Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics. - Michael Knetzger; Elke Meissner; Joff Derluyn; Marianne Germain; Jochen Friedrich (Microelectron. Reliab., 2016)