Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. - Simon Van Beek; Koen Martens; Philippe Roussel; Gabriele Luca Donadio; Johan Swerts; Sofie Mertens; Gouri Sankar Kar; Tai Min; Guido Groeseneken (IRPS, 2015)

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. - Barry J. O'Sullivan; Simon Van Beek; Philippe J. Roussel; Sidharth Rao; Wonsub Kim; S. Couet; Johan Swerts; Farrukh Yasin; Dimitri Crotti; Dimitri Linten; Gouri Sankar Kar (IRPS, 2018)

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories. - Kevin Garello; Kevin Garello Yasin; S. Couet; Laurent Souriau; Johan Swerts; Sidharth Rao; Simon Van Beek; Wonsub Kim; Enlong Liu; Shreya Kundu; Diana Tsvetanova; Kris Croes; et al. (VLSI Circuits, 2018)

SOT-MRAM 300mm integration for low power and ultrafast embedded memories. - Kevin Garello; Farrukh Yasin; S. Couet; Laurent Souriau; Johan Swerts; Sidharth Rao; Simon Van Beek; Wonsub Kim; Enlong Liu; Shreya Kundu; Diana Tsvetanova; N. Jossart; et al. (CoRR, 2018)

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM. - Kevin Garello; Farrukh Yasin; Hubert Hody; S. Couet; Laurent Souriau; Shamin H. Sharifi; Johan Swerts; Robert Carpenter; Sidharth Rao; Wonsub Kim; J. Wu; K. K. V. Sethu; et al. (VLSI Circuits, 2019)