On the voltage scaling potential of SONOS non-volatile memory transistors. - Johannes Ocker; Stefan Slesazeck; Thomas Mikolajick; S. Buschbeck; S. Günther; E. Yurchuk; R. Hoffmann; V. Beyer (ESSDERC, 2015)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)