High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. - Pouya Hashemi; Takashi Ando; Karthik Balakrishnan; John Bruley; Sebastian U. Engelmann; John A. Ott; Vijay Narayanan; D.-G. Park; Renee T. Mo; Effendi Leobandung (VLSIC, 2015)

Electron mobility in thin In0.53Ga0.47As channel. - Eduard Cartier; Atreya Majumdar; K.-T. Lee; Takashi Ando; Martin M. Frank; John Rozen; Keith A. Jenkins; C. Liang; C.-W. Cheng; John Bruley; M. Hopstaken; Pranita Kerber; et al. (ESSDERC, 2017)