RFCMOS technology from 0.25μm to 65nm: the state of the art. - John J. Pekarik; David R. Greenberg; Basanth Jagannathan; Robert A. Groves; J. R. Jones; Raminderpal Singh; Anil Chinthakindi; Xudong Wang; Matthew J. Breitwisch; Douglas D. Coolbaugh; Peter E. Cottrell; John E. Florkey; et al. (CICC, 2004)

A 23-to-29GHz Differentially Tuned Varactorless VCO in 0.13μm CMOS. - KaChun Kwok; John R. Long; John J. Pekarik (ISSCC, 2007)

A UWB transformer-C orthonormal state space band-reject filter in 0.13 μm CMOS. - Sumit Bagga; Zoubir Irahhauten; Sandro A. P. Haddad; Wouter A. Serdijn; John R. Long; John J. Pekarik (ESSCIRC, 2008)

A 56-to-65GHz Injection-Locked Frequency Tripler with Quadrature Outputs in 90nm CMOS. - Wei L. Chan; John R. Long; John J. Pekarik (ISSCC, 2008)

A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS. - José Gabriel Macias-Montero; H. Yan; Atef Akhnoukh; Leo C. N. de Vreede; John R. Long; José María López-Villegas; John J. Pekarik (ESSCIRC, 2009)

A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS. - Wei L. Chan; John R. Long; Marco Spirito; John J. Pekarik (ISSCC, 2009)

A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. - Munkyo Seo; Basanth Jagannathan; Corrado Carta; John J. Pekarik; Luis Chen; C. Patrick Yue; Mark J. W. Rodwell (ISSCC, 2009)

A 150 GHz Amplifier With 8 dB Gain and +6 dBm Psat in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines. - Munkyo Seo; Basanth Jagannathan; John J. Pekarik; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2009)

A 900μW, 3-5GHz integrated FM-UWB transmitter in 90nm CMOS. - Nitz Saputra; John R. Long; John J. Pekarik (ESSCIRC, 2010)

A 60GHz-band 2×2 phased-array transmitter in 65nm CMOS. - Wei L. Chan; John R. Long; Marco Spirito; John J. Pekarik (ISSCC, 2010)

A 34dB SNDR instantaneously-companding baseband SC filter for 802.11a/g WLAN receivers. - Vaibhav Maheshwari; Wouter A. Serdijn; John R. Long; John J. Pekarik (ISSCC, 2010)

A frequency-selective nested dual-loop broadband low-noise amplifier in 90 nm CMOS. - Sumit Bagga; André Mansano; Wouter A. Serdijn; John R. Long; Kathleen Philips; John J. Pekarik (ESSCIRC, 2012)

Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs. - Dimitris P. Ioannou; Uppili S. Raghunathan; Dave Brochu; Adam W. DiVergilio; Vibhor Jain; John J. Pekarik (BCICTS, 2021)

SiGe HBTs with ${f_{T}/f_{ max} , sim , 375/510GHz}$ Integrated in 45nm PDSOI CMOS. - John J. Pekarik; Vibhor Jain; Crystal Kenney; Judson Holt; Shweta Khokale; Sudesh Saroop; Jeffrey B. Johnson; Kenneth J. Stein; Viorel Ontalus; Christopher Durcan; Mona Nafari; Tayel Nesheiwat; et al. (BCICTS, 2021)

SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. - Alvin J. Joseph; Vibhor Jain; John J. Pekarik; Ajay Raman; Shafi Syed; Liu Hang; Ned Cahoon; Randy Wolf; Venkat Vanukuru; Elan Veeramani; Beng Woon Lim; Uppili S. Raghunathan; et al. (BCICTS, 2022)

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. - Uppili S. Raghunathan; Saurabh Sirohi; Vaibhav Ruparelia; Prateek Kumar Sharma; Dimitris P. Ioannou; Vibhor Jain; H. K. Kakara; S. Gedela; Venkat Vanukuru; P. Dongmo; C. Luce; R. Hazbun; et al. (BCICTS, 2022)