Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator. - Robin B. Jacobs-Gedrim; Sapan Agarwal; Kathrine E. Knisely; Jim E. Stevens; Michael S. van Heukelom; David R. Hughart; John Niroula; Conrad D. James; Matthew J. Marinella (ICRC, 2017)

Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator. - Matthew J. Marinella; Sapan Agarwal; Alexander H. Hsia; Isaac Richter; Robin Jacobs-Gedrim; John Niroula; Steven J. Plimpton; Engin Ipek; Conrad D. James (IEEE J. Emerg. Sel. Topics Circuits Syst., 2018)

Using Floating Gate Memory to Train Ideal Accuracy Neural Networks. - Sapan Agarwal; Diana Garland; John Niroula; Robin B. Jacobs-Gedrim; Alexander H. Hsia; Michael S. van Heukelom; Elliot J. Fuller; Bruce Draper; Matthew J. Marinella (CoRR, 2019)

Materials and Technology Issues for the Next Generation of Power Electronic Devices. - Ahmad Zubair; John Niroula; Nadim Chowdhury; Yuhao Zhang; Jori Lemettinen; Tomás Palacios (DRC, 2020)

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. - Ahmad Zubair; Joshua A. Perozek; John Niroula; O. Aktas; V. Odnoblyudov; Tomás Palacios (DRC, 2020)

First Demonstration of GaN RF HEMTs on Engineered Substrate. - Pradyot Yadav; Qingyun Xie; John Niroula; Gillian K. Micale; Hridibrata Pal; Tomás Palacios (DRC, 2023)

Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. - Qingyun Xie; Mengyang Yuan; John Niroula; Bejoy Sikder; Shisong Luo; Kai Fu; Nitul S. Rajput; Ayan Biswas Pranta; Pradyot Yadav; Yuji Zhao; Nadim Chowdhury; Tomás Palacios (VLSI Technology and Circuits, 2023)

Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. - John Niroula; Matthew A. Taylor; Qingyun Xie; Pradyot Yadav; Shisong Luo; Yuji Zhao; Tomás Palacios (DRC, 2024)