Increased hot carrier effects in Gate-All-Around SOI nMOSFET's. - Jong Tae Park 003; Nag Jong Choi; Chong-Gun Yu; Seok Hee Jeon; Jean-Pierre Colinge (Microelectron. Reliab., 2003)

Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures. - Se Re Na Yun; Won Sub Park; Byung Ha Lee; Jong Tae Park 003 (Microelectron. Reliab., 2003)

Effects of hot carrier stress on the RF performance in SOI MOSFETs. - Byung-Jin Lee; Kyosun Kim; Jong Tae Park 003 (Microelectron. Reliab., 2004)

Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's. - Se Re Na Yun; Chong-Gun Yu; Seok Hee Jeon; Chungkyue Kim; Jong Tae Park 003; Jean-Pierre Colinge (Microelectron. Reliab., 2004)

Reliability improvement by the suppression of keyhole generation in W-plug vias. - Jong Hun Kim; Kyosun Kim; Seok Hee Jeon; Jong Tae Park 003 (Microelectron. Reliab., 2005)

New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors. - In Kyung Lee; Se Re Na Yun; Kyosun Kim; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2006)

Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs. - Sung Jun Jang; Dae Hyun Ka; Chong-Gun Yu; Kwan-Su Kim; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2007)

NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer. - Yong Woo Jeon; Dae Hyun Ka; Chong-Gun Yu; Won-Ju Cho; M. Saif Islam; Jong Tae Park 003 (Microelectron. Reliab., 2009)

NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs. - Chi-Woo Lee; Isabelle Ferain; Aryan Afzalian; Ran Yan; Nima Dehdashti; Pedram Razavi; Jean-Pierre Colinge; Jong Tae Park 003 (Microelectron. Reliab., 2009)

NBTI and hot carrier effect of Schottky-barrier p-MOSFETs. - Jin-Young Kim; Jun-Seok Oh; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2010)

The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation. - Dong Wook Kim; Woo Sang Park; Jong Tae Park 003 (Microelectron. Reliab., 2010)

Effects of device layout on the drain breakdown voltages in MuGFETs. - Jin-Young Kim; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2011)

Concurrent PBTI and hot carrier degradation in n-channel MuGFETs. - Seung Min Lee; Dong Hun Lee; Jae Ki Lee; Jong Tae Park 003 (Microelectron. Reliab., 2011)

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics. - Seul Ki Lee; Sung Il Hong; Yeon Ho Lee; Se Won Lee; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2012)

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. - Seung-Min Lee; Chong-Gun Yu; Seung Min Jeong; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2012)

Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods. - Hongbin Shi; F. X. Che; Cuihua Tian; Rui Zhang; Jong Tae Park 003; Toshitsugu Ueda (Microelectron. Reliab., 2012)

Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model. - Rui Zhang; Hongbin Shi; Yuehong Dai; Jong Tae Park 003; Toshitsugu Ueda (Microelectron. Reliab., 2012)

A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors. - Hyun Jun Jang; Seung Min Lee; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2013)

Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors. - Seung Min Lee; Hyun Jun Jang; Jong Tae Park 003 (Microelectron. Reliab., 2013)

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs. - Jin Hyung Choi; Jin-Woo Han; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2014)

The effect of gate overlap on the device degradation in IGZO thin film transistors. - Dae Hyun Kim; Jong Tae Park 003 (Microelectron. Reliab., 2014)

Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress. - Jae Hoon Lee; Jong Tae Park 003 (Microelectron. Reliab., 2014)

Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs. - Jin Hyung Choi; Jong Tae Park 003 (Microelectron. Reliab., 2015)

Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination. - Dae Hyun Kim; Jong Tae Park 003 (Microelectron. Reliab., 2015)

Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. - Jae Hoon Lee; Jin-Woo Han; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2015)

Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory. - Jin Hyung Choi; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2016)

Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors. - Hyun Jun Jang; Chong-Gun Yu; Jong Tae Park 003 (Microelectron. Reliab., 2016)

Device instability of amorphous InGaZnO thin film transistors with transparent source and drain. - Sang Min Kim; Min-Ju Ahn; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2016)

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain. - Jong Hoon Lee; Seul Ki Yu; Jae Won Kim; Min-Ju Ahn; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2016)

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer. - Sang Min Kim; Min-Soo Kang; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2017)

Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors. - Hyun Jong Kim; Byung Sang Song; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2017)

Thermal energy harvesting circuit with maximum power point tracking control for self-powered sensor node applications. - Eun-Jung Yoon; Jong-Tae Park 003; Chong-Gun Yu (Frontiers Inf. Technol. Electron. Eng., 2018)

Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors. - Hee Pyung Park; Sang Woo Kim; Joong-Won Shin; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2018)