Enhancing Ohmic Contacts in GaN HEMT Through Optimization of Ramp-Up Rate in Annealing Process. - Junhyung Kim; Gyejung Lee; Kyujun Cho; Jong Yul Park; Byoung-Gue Min; Junhyung Jeong; Honggu Ji; Woojin Chang; Jong-Min Lee; Dong-Min Kang (ICTC, 2024)

GaAs mHEMT Technology Achieving a High Cut-Off Frequncy of 446 GHz with a Gate Length of 75 nm. - Jong Yul Park; Byoung-Gue Min; Jong-Min Lee; Woojin Chang; Honggu Ji; Junhyung Jeong; Junhyung Kim; Gyejung Lee; Kyujun Cho; Dong Min Kang (ICTC, 2024)