Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers. - Hyun Woo Kim; Dong Hun Kim; Joo Hyung You; Tae Whan Kim (IEICE Trans. Electron., 2010)

Multilevel Dual-Channel NAND Flash Memories with High Read and Program Verifying Speeds Utilizing Asymmetrically-Doped Channel Regions. - Joung Woo Lee; Joo Hyung You; Sang Hyun Jang; Kae-Dal Kwack; Tae-Whan Kim (IEICE Trans. Electron., 2010)