A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. - Ki-Tae Park; Ohsuk Kwon; Sangyong Yoon; Myung-Hoon Choi; In-Mo Kim; Bo-Geun Kim; Min-Seok Kim; Yoon-Hee Choi; Seung-Hwan Shin; Youngson Song; Joo-Yong Park; Jae-Eun Lee; et al. (ISSCC, 2011)

Design of Exhibition contents using swipe gesture recognition communication based on Kinect. - Yi-Yoen Kim; Min-Woo Lee 004; Joo-Yong Park; Soon-Ho Jung; Kyung-Hoon Kim; Jae Sang Cha (ICOIN, 2015)

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)