Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing. - Jaeyong Jeong; Seong Kwang Kim; Yoon-Je Suh; Jisung Lee; Joonyoung Choi; Juhyuk Park; Joon Pyo Kim; Bong Ho Kim; Younjung Jo; Seung-Young Park; Jongmin Kim; Sanghyeon Kim (VLSI Technology and Circuits, 2023)

Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si. - Song-Hyeon Kuk; Jae-Hoon Han; Bong Ho Kim; Joon Pyo Kim; Sang-Hyeon Kim (VLSI Technology and Circuits, 2023)

First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication. - Nahyun Rheem; Jaeyong Jeong; Yoon-Je Suh; Chan Jik Lee; Bong Ho Kim; Joon Pyo Kim; Seong Kwang Kim; Hyeongrak Lim; Jongmin Kim; Dae-Hwan Ahn; Jae-Hoon Han; Jongwon Lee; et al. (VLSI Technology and Circuits, 2024)