Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. - Sang-Myeon Han; Min-Cheol Lee; Moon-Young Shin; Joong-Hyun Park; Min-Koo Han (Proc. IEEE, 2005)

Kink Suppression and High Reliability of Asymmetric Dual Channel Poly-Si Thin Film Transistors for High Voltage Bias Stress. - Joong-Hyun Park; Myunghun Shin (IEICE Trans. Electron., 2019)