Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors. - Hee Pyung Park; Sang Woo Kim; Joong-Won Shin; Won-Ju Cho; Jong Tae Park 003 (Microelectron. Reliab., 2018)

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (DRC, 2021)

MFSFET with Ferroelectric HfN for Analog Memory Application. - Shun'ichiro Ohmi; Akio Ihara; Masakazu Tanuma; Jooyoung Pyo; Joong-Won Shin (DRC, 2022)

Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation. - Joong-Won Shin; Masakazu Tanuma; J. Pyo; Shun'ichiro Ohmi (DRC, 2022)

MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (IEICE Trans. Electron., 2022)

The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation. - Masakazu Tanuma; Joong-Won Shin; Shun'ichiro Ohmi (IEICE Trans. Electron., 2022)

Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. - Shun'ichiro Ohmi; Masakazu Tanuma; Joong-Won Shin (DRC, 2023)

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application. - Joong-Won Shin; Masakazu Tanuma; Shun'ichiro Ohmi (IEICE Trans. Electron., 2023)