5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)