Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets. - Xavier Oriols; Jordi Suñé (VLSI Design, 2001)

Statistics of soft and hard breakdown in thin SiO2 gate oxides. - Jordi Suñé; Ernest Y. Wu; David Jiménez; Wing L. Lai (Microelectron. Reliab., 2003)

Critical reliability challenges in scaling SiO2-based dielectric to its limit. - Ernest Y. Wu; Jordi Suñé; Wing L. Lai; Alex Vayshenker; Edward J. Nowak; David L. Harmon (Microelectron. Reliab., 2003)

Electron transport through broken down ultra-thin SiO2 layers in MOS devices. - Enrique Miranda 002; Jordi Suñé (Microelectron. Reliab., 2004)

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. - Ernest Y. Wu; Jordi Suñé (Microelectron. Reliab., 2005)

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. - Enrique Miranda 002; Takamasa Kawanago; Kuniyuki Kakushima; Jordi Suñé; Hiroshi Iwai (Microelectron. Reliab., 2012)

Field-effect control of breakdown paths in HfO2 based MIM structures. - X. Saura; X. Lian; David Jiménez; Enrique Miranda 002; Xavier Borrisé; Francesca Campabadal; Jordi Suñé (Microelectron. Reliab., 2013)

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. - X. Saura; D. Moix; Jordi Suñé; Paul K. Hurley; Enrique Miranda 002 (Microelectron. Reliab., 2013)

Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors. - Juli Blasco; Helena Castán; Héctor García; Salvador Dueñas; Jordi Suñé; Marianna Kemell; Kaupo Kukli; Mikko Ritala; Markku Leskelä; Enrique Miranda 002 (Microelectron. Reliab., 2014)

Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects. - Juli Blasco; Jordi Suñé; Enrique Miranda 002 (ESSDERC, 2015)

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films. - Juli Blasco; Nestor Fabian Ghenzi; Jordi Suñé; Pablo Levy; Enrique Miranda 002 (Microelectron. Reliab., 2015)

Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates. - Alberto Rodriguez-Fernandez; M. B. González; Francesca Campabadal; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2015)

Equivalent circuit model for the electron transport in 2D resistive switching material systems. - Enrique Miranda 002; Jordi Suñé; Chengbin Pan; Marco A. Villena; Na Xiao; Mario Lanza (ESSDERC, 2017)

Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. - Alberto Rodriguez-Fernandez; Carlo Cagli; Luca Perniola; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2017)

Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications. - German Agustin Patterson; Jordi Suñé; Enrique Miranda 002 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2017)

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions. - German Agustin Patterson; Jordi Suñé; Enrique Miranda 002 (Int. J. Circuit Theory Appl., 2018)

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. - Alberto Rodriguez-Fernandez; J. Muñoz-Gorriz; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2018)

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. - Fernando Leonel Aguirre; Sebastián Matías Pazos; Felix Palumbo; Jordi Suñé; Enrique Miranda 002 (IEEE Access, 2020)

Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition. - Fernando L. Aguirre; Sebastián Matías Pazos; Felix Palumbo; N. Gomez; Enrique Miranda 002; Jordi Suñé (LASCAS, 2021)

Simulation Study of the Maximum Power Dissipation-Energy Consumption Dilemma in Memristors Using the Dynamic Memdiode Model. - Enrique Miranda 002; E. Piros; Fernando L. Aguirre; X. Pérez; T. Kim; J. P. Schreyer; Jonas Gehrunger; T. Oster; Klaus Hofmann; Jordi Suñé; Christian Hochberger; L. Alff (SMACD, 2025)