The electron irradiation effects on silicon gate dioxide used for power MOS devices. - Marian Badila; Philippe Godignon; José Millán; S. Berberich; Gheorghe Brezeanu (Microelectron. Reliab., 2001)

Reduction of self-heating effect on SOIM devices. - Jaume Roig; David Flores; Miquel Vellvehí; José Rebollo; José Millán (Microelectron. Reliab., 2002)

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. - Amador Pérez-Tomás; Xavier Jordà; Philippe Godignon; Jose Luis Gálvez; Miquel Vellvehí; José Millán (Microelectron. J., 2004)

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. - Xavier Perpiñà; Xavier Jordà; N. Mestres; Miquel Vellvehí; Philippe Godignon; José Millán (Microelectron. J., 2004)

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. - Jaume Roig; David Flores; Salvador Hidalgo; José Rebollo; José Millán (Microelectron. J., 2004)

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. - X. Perpiñà; Jean-François Serviere; J. Saiz; Davide Barlini; Michel Mermet-Guyennet; José Millán (Microelectron. Reliab., 2006)

Wide band-gap power semiconductor devices. - José Millán (IET Circuits Devices Syst., 2007)

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. - X. Perpiñà; Alberto Castellazzi; M. Piton; Michel Mermet-Guyennet; José Millán (Microelectron. Reliab., 2007)

Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles. - X. Perpiñà; M. Piton; Michel Mermet-Guyennet; Xavier Jordà; José Millán (Microelectron. Reliab., 2007)

Coupled electro-thermal simulation of a DC/DC converter. - Miquel Vellvehí; Xavier Jordà; Philippe Godignon; Carles Ferrer 001; José Millán (Microelectron. Reliab., 2007)

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. - Viorel Banu; Pierre Brosselard; Xavier Jordà; Josep Montserrat; Philippe Godignon; José Millán (Microelectron. Reliab., 2008)

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; J. M. Parsey; Peter Moens (ESSDERC, 2012)

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. - Viorel Banu; Philippe Godignon; Xavier Perpiñà; Xavier Jordà; José Millán (Microelectron. Reliab., 2012)

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; Herbert De Vleeschouwer; John M. Parsey; Peter Moens (Microelectron. Reliab., 2012)

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. - Viorel Banu; Philippe Godignon; Mihaela Alexandru; Miquel Vellvehí; Xavier Jordà; José Millán (ESSCIRC, 2013)

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. - Mihaela Alexandru; Viorel Banu; Philippe Godignon; Miquel Vellvehí; José Millán (ESSDERC, 2013)

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. - Matthieu Florentin; José Millán; Philippe Godignon; Mihaela Alexandru; Aurore Constant; Bernd Schmidt 008 (ESSDERC, 2014)

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. - Victor Soler; Maxime Berthou; Andrei Mihaila; Josep Montserrat; Philippe Godignon; José Rebollo; José Millán (ESSDERC, 2015)

SiC Integrated Circuit Control Electronics for High-Temperature Operation. - Mihaela Alexandru; Viorel Banu; Xavier Jordà; Josep Montserrat; Miquel Vellvehí; Dominique Tournier; José Millán; Philippe Godignon (IEEE Trans. Ind. Electron., 2015)

Power cycling analysis method for high-voltage SiC diodes. - Viorel Banu; Victor Soler; Josep Montserrat; José Millán; Philippe Godignon (Microelectron. Reliab., 2016)