Reduction of self-heating effect on SOIM devices. - Jaume Roig; David Flores; Miquel Vellvehí; José Rebollo; José Millán (Microelectron. Reliab., 2002)

Optimisation of very low voltage TVS protection devices. - Jesús Urresti; Salvador Hidalgo; David Flores; Jaume Roig; José Rebollo; I. Mazarredo (Microelectron. J., 2003)

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. - Jaume Roig; David Flores; Salvador Hidalgo; José Rebollo; José Millán (Microelectron. J., 2004)

Design considerations for 6.5 kV IGBT devices. - Miquel Vellvehí; David Flores; Xavier Jordà; Salvador Hidalgo; José Rebollo; L. Coulbeck; P. Waind (Microelectron. J., 2004)

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. - Ignasi Cortés; Jaume Roig; David Flores; Jesús Urresti; Salvador Hidalgo; José Rebollo (Microelectron. Reliab., 2005)

Lateral punch-through TVS devices for on-chip protection in low-voltage applications. - Jesús Urresti; Salvador Hidalgo; David Flores; Jaume Roig; Ignasi Cortés; José Rebollo (Microelectron. Reliab., 2005)

Robustness test and failure analysis of IGBT modules during turn-off. - Jesús Urresti-Ibañez; Alberto Castellazzi; M. Piton; José Rebollo; Michel Mermet-Guyennet; Mauro Ciappa (Microelectron. Reliab., 2007)

Superjunction LDMOS on thick-SOI technology for RF applications. - Ignasi Cortés; Pablo Fernández-Martínez; David Flores; Salvador Hidalgo; José Rebollo (Microelectron. J., 2008)

Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors. - Ignasi Cortés; Pablo Fernández-Martínez; David Flores; Salvador Hidalgo; José Rebollo (Microelectron. Reliab., 2008)

IGBT module failure analysis in railway applications. - X. Perpiñà; Jean-François Serviere; Xavier Jordà; A. Fauquet; Salvador Hidalgo; Jesús Urresti-Ibañez; José Rebollo; Michel Mermet-Guyennet (Microelectron. Reliab., 2008)

Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems. - Xavier Perpiñà; Xavier Jordà; Miquel Vellvehí; José Rebollo; Michel Mermet-Guyennet (IEEE Trans. Ind. Electron., 2011)

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions. - Xavier Perpiñà; Jean-François Serviere; Jesús Urresti-Ibañez; Ignasi Cortés; Xavier Jordà; Salvador Hidalgo; José Rebollo; Michel Mermet-Guyennet (IEEE Trans. Ind. Electron., 2011)

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling. - Ignasi Cortés; Xavier Perpiñà; Jesús Urresti; Xavier Jordà; José Rebollo (Microelectron. Reliab., 2012)

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. - Victor Soler; Maxime Berthou; Andrei Mihaila; Josep Montserrat; Philippe Godignon; José Rebollo; José Millán (ESSDERC, 2015)

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. - Victor Soler; Maria Cabello; Maxime Berthou; Josep Montserrat; José Rebollo; Philippe Godignon; Andrei Mihaila; Maria R. Rogina; Alberto Rodriguez 001; Javier Sebastián (IEEE Trans. Ind. Electron., 2017)

Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices. - Manuel Fernandez; Xavier Perpiñà; José Rebollo; Miquel Vellvehí; David Sanchez; Tomás Cabeza; Sergio Llorente; Xavier Jordà (IEEE Trans. Ind. Electron., 2019)

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs. - Oriol Avino-Salvado; Cyril Buttay; Ferran Bonet; Christophe Raynaud; Pascal Bevilacqua; José Rebollo; Hervé Morel; Xavier Perpiñà (IEEE Trans. Ind. Electron., 2024)