46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology. - Alfred Felder; Michael Möller 004; Josef Popp; Josef Böck; Hans-Martin Rein (IEEE J. Solid State Circuits, 1996)

A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz fT silicon bipolar technology. - Martin Wurzer; Josef Böck; Herbert Knapp; Wolfgang Zirwas; Fritz Schumann; Alfred Felder (IEEE J. Solid State Circuits, 1999)

2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology. - Herbert Knapp; Josef Böck; Martin Wurzer; Günter Ritzberger; Klaus Aufinger; Ludwig Treitinger (IEEE J. Solid State Circuits, 2001)

38 GHz low-power static frequency divider in SiGe bipolar technology. - Günter Ritzberger; Josef Böck; Herbert Knapp; Ludwig Treitinger; Arpad L. Scholtz (ISCAS (4), 2002)

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz. - Hao Li 053; Hans-Martin Rein; Thomas Suttorp; Josef Böck (IEEE J. Solid State Circuits, 2004)

100-Gb/s 27-1 and 54-Gb/s 211-1 PRBS generators in SiGe bipolar technology. - Herbert Knapp; Martin Wurzer; Werner Perndl; Klaus Aufinger; Josef Böck; Thomas F. Meister (IEEE J. Solid State Circuits, 2005)

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. - Saverio Trotta; Bernhard Dehlink; Herbert Knapp; Klaus Aufinger; Thomas F. Meister; Josef Böck; Werner Simbürger; Arpad L. Scholtz (ESSCIRC, 2007)

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. - Saverio Trotta; Herbert Knapp; Donald Dibra; Klaus Aufinger; Thomas F. Meister; Josef Böck; Werner Simbürger; Arpad L. Scholtz (ISSCC, 2007)

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. - Saverio Trotta; Herbert Knapp; Klaus Aufinger; Thomas F. Meister; Josef Böck; Bernhard Dehlink; Werner Simbürger; Arpad L. Scholtz (IEEE J. Solid State Circuits, 2007)

Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. - K.-H. Allers; Josef Böck; S. Boguth; K. Goller; Herbert Knapp; Rudolf Lachner (Microelectron. Reliab., 2009)

Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. - C. Mukherjee 001; Thomas Jacquet; Thomas Zimmer; Cristell Maneux; Anjan Chakravorty; Josef Boeck; Klaus Aufinger (ESSDERC, 2016)

Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit. - C. Mukherjee 001; Thomas Jacquet; Anjan Chakravorty; Thomas Zimmer; Josef Boeck; Klaus Aufinger; Cristell Maneux (Microelectron. Reliab., 2017)

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. - Michael Schröter; Tommy Rosenbaum; Pascal Chevalier 002; Bernd Heinemann; Sorin P. Voinigescu; Ed Preisler; Josef Böck; Anindya Mukherjee (Proc. IEEE, 2017)

SiGe BiCMOS Current Status and Future Trends in Europe. - Pascal Chevalier 002; Wolfgang Liebl; Holger Rücker; Alexis Gauthier; Dirk Manger; Bernd Heinemann; Grégory Avenier; Josef Böck (BCICTS, 2018)

Integration of SiGe HBT with fT=305GHz, fmax=537GHz in 130nm and 90nm CMOS. - Dirk Manger; Wolfgang Liebl; S. Boguth; B. Binder; Klaus Aufinger; C. Dahl; C. Hengst; A. Pribil; J. Oestreich; S. Rohmfeld; S. Rothenhaeusser; D. Tschumakow; et al. (BCICTS, 2018)