Dynamic avalanche and reliability of high voltage diodes. - Josef Lutz; Martin Domeij (Microelectron. Reliab., 2003)

Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. - Ralf Siemieniec; Josef Lutz (Microelectron. J., 2004)

Compensation and doping effects in heavily helium-radiated silicon for power device applications. - Ralf Siemieniec; Hans-Joachim Schulze; Franz-Josef Niedernostheide; W. Südkamp; Josef Lutz (Microelectron. J., 2006)

Thyristors and IGBTs with integrated self-protection functions. - Franz-Josef Niedernostheide; Hans-Joachim Schulze; Hans Peter Felsl; Thomas Laska; Ulrich Kellner-Werdehausen; Josef Lutz (IET Circuits Devices Syst., 2007)

Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes. - D. Polenov; Josef Lutz; Hartmut Pröbstle; Andreas Brösse (IET Circuits Devices Syst., 2007)

Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations. - Birk Heinze; Josef Lutz; Hans Peter Felsl; Hans-Joachim Schulze (Microelectron. J., 2008)

Thermal impedance spectroscopy of power modules. - A. Hensler; D. Wingert; Christian Herold; Josef Lutz; Markus Thoben (Microelectron. Reliab., 2011)

Surge current capability of IGBTs. - Thomas Basler; Josef Lutz; Roland Jakob; Thomas Bruckner (SSD, 2012)

A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems. - Salvatore D'Arco; Tore Undeland; Marco Bohlländer; Josef Lutz (SSD, 2012)

Dynamic avalanche in bipolar power devices. - Josef Lutz; Roman Baburske (Microelectron. Reliab., 2012)

Mechanical analysis of press-pack IGBTs. - Tilo Poller; Thomas Basler; Magnar Hernes; Salvatore D'Arco; Josef Lutz (Microelectron. Reliab., 2012)

Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. - Tilo Poller; Salvatore D'Arco; Magnar Hernes; Atle Rygg Årdal; Josef Lutz (Microelectron. Reliab., 2013)

Approach of a physically based lifetime model for solder layers in power modules. - P. Steinhorst; Tilo Poller; Josef Lutz (Microelectron. Reliab., 2013)

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept. - Thomas Basler; M. Pfaffenlehner; Hans Peter Felsl; Franz-Josef Niedernostheide; F. Pfirsch; Hans-Joachim Schulze; Roman Baburske; Josef Lutz (IET Circuits Devices Syst., 2014)

Some aspects on ruggedness of SiC power devices. - Josef Lutz; Roman Baburske (Microelectron. Reliab., 2014)

Ruggedness of 1200 V SiC MPS diodes. - Susanne Fichtner; Sophia Frankeser; Josef Lutz; Roland Rupp; Thomas Basler; Rolf Gerlach (Microelectron. Reliab., 2015)

Possible failure modes in Press-Pack IGBTs. - Lukas Tinschert; Atle Rygg Årdal; Tilo Poller; Marco Bohlländer; Magnar Hernes; Josef Lutz (Microelectron. Reliab., 2015)

Internal processes in power semiconductors at virtual junction temperature measurement. - Weinan Chen; Jörg Franke; Christian Herold; Riteshkumar Bhojani; Josef Lutz (Microelectron. Reliab., 2016)

Requirements in power cycling for precise lifetime estimation. - Christian Herold; Jörg Franke; Riteshkumar Bhojani; Andre Schleicher; Josef Lutz (Microelectron. Reliab., 2016)

Topologies for inverter like operation of power cycling tests. - Christian Herold; Peter Seidel; Josef Lutz; Reinhold Bayerer (Microelectron. Reliab., 2016)

Improving the short circuit ruggedness of IGBTs. - Lukas Tinschert; Magnar Hernes; Josef Lutz (Microelectron. Reliab., 2016)

Unified view on energy and electrical failure of the short-circuit operation of IGBTs. - Roman Baburske; Franz-Josef Niedernostheide; Hans-Joachim Schulze; Riteshkumar Bhojani; J. Kowalsky; Josef Lutz (Microelectron. Reliab., 2018)

Reliability and reliability investigation of wide-bandgap power devices. - Josef Lutz; Jörg Franke (Microelectron. Reliab., 2018)

Study on power cycling test with different control strategies. - Guang Zeng; F. Wenisch-Kober; Josef Lutz (Microelectron. Reliab., 2018)

Specific aspects regarding evaluation of power cycling tests with SiC devices. - Martina Gerlach; Peter Seidel; Josef Lutz (IRPS, 2020)

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. - Shanmuganathan Palanisamy; Josef Lutz; Roman Boldyrjew-Mast; Thomas Basler (IRPS, 2020)

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. - Shanmuganathan Palanisamy; Thomas Basler; Josef Lutz; Cesare Künzel; Larissa Wehrhahn-Kilian; Rudolf Elpelt (IRPS, 2021)