AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. - Joseph Casamento; Kazuki Nomoto; Thai-Son Nguyen; Hyunjea Lee; Chandrasekhar Savant; Lei Li 023; Austin Hickman; Takuya Maeda; Yu-Tsun Shao; Jimy Encomendero; Ved Gund; Timothy Vasen; et al. (BCICTS, 2023)

Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. - Quyen Tran; John Hayden; Joseph Casamento; Jon-Paul Maria; Thomas N. Jackson (DRC, 2024)

Epitaxial high-K AlBN barrier GaN HEMTs. - Chandrashekhar Savant; Thai-Son Nguyen; Kazuki Nomoto; Saurabh Vishwakarma; Siyuan Ma; Akshey Dhar; Yu-Hsin Chen; Joseph Casamento; David J. Smith; Huili Grace Xing; Debdeep Jena (CoRR, 2025)