Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric. - Fu-Chien Chiu; Shun-An Lin; Joseph Ya-min Lee (Microelectron. Reliab., 2005)

Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films. - Ming-Tsong Wang; Tsung-Hong Wang; Joseph Ya-min Lee (Microelectron. Reliab., 2005)

Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors. - Shao-You Deng; Chang-Han Wu; Joseph Ya-min Lee (Microelectron. J., 2006)

An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO2 gate dielectrics. - Fu-Chien Chiu; Wen-Chieh Shih; Joseph Ya-min Lee; Huey-Liang Hwang (Microelectron. Reliab., 2007)

Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications. - Hsin-hao Hsu; Joseph Ya-min Lee (Microelectron. Reliab., 2007)

The characterization of retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3, Y2O3)-semiconductor devices. - Yu-Di Su; Wen-Chieh Shih; Joseph Ya-min Lee (Microelectron. Reliab., 2007)