A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology. - Hyun-Woo Lee; Ki-Han Kim; Young-Kyoung Choi; Ju-Hwan Sohn; Nak-Kyu Park; Kwan-Weon Kim; Chulwoo Kim; Young-Jung Choi; Byong-Tae Chung (IEEE J. Solid State Circuits, 2012)