11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology. - Ryuji Yamashita; Sagar Magia; Tsutomu Higuchi; Kazuhide Yoneya; Toshio Yamamura; Hiroyuki Mizukoshi; Shingo Zaitsu; Minoru Yamashita; Shunichi Toyama; Norihiro Kamae; Juan Lee; Shuo Chen; et al. (ISSCC, 2017)

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Kazushige Kanda; Takahiro Shimizu; Jun Nakai; Osamu Nagao; Naoki Kobayashi 004; Makoto Miakashi; Yasushi Nagadomi; Takeshi Nakano; Takahisa Kawabe; Taira Shibuya; Mario Sako; et al. (ISSCC, 2019)

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Takahisa Kawabe; Taira Shibuya; Mario Sako; Kosuke Yanagidaira; Toshifumi Hashimoto; Hiroki Date; Manabu Sato; Tomoki Nakagawa; Junji Musha; Takatoshi Minamoto; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 2020)

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. - Tsutomu Higuchi; Takuyo Kodama; Koji Kato; Ryo Fukuda; Naoya Tokiwa; Mitsuhiro Abe; Teruo Takagiwa; Yuki Shimizu; Junji Musha; Katsuaki Sakurai; Jumpei Sato; Tetsuaki Utsumi; et al. (ISSCC, 2021)

U-Net++ Based Subshallow Gas-Scattered Image Conditioning: Small-Scale Case Study of Seismic Data Acquired in the Korean East Sea. - Juan Lee; Min Je Lee; Hanjoon Park; Hyunggu Jun; Yongchae Cho (IEEE Trans. Geosci. Remote. Sens., 2024)