Similarities and Differences of BTI in SiC and Si Power MOSFETs. - Judith Berens; Magdalena Weger; Gregor Pobegen; Thomas Aichinger; Gerald Rescher; Christian Schleich; Tibor Grasser (IRPS, 2020)

A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. - Judith Berens; Thomas Aichinger (IRPS, 2021)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)