Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. - Zhixing Zhao; Patrick James Artz; Klaus Hempel; Juergen Faul; Tianbing Chen; Richard Taylor; Jerome Mazurier; Carsten Grass; Jan Hoentschel; David Harame; Steffen Lehmann; Luca Lucci; et al. (ESSDERC, 2019)