Innovative GeS2/Sb2Te3 based phase change memory for low power applications. - Julia Kluge; Anthonin Verdy; Gabriele Navarro; Serge Blonkowski; Veronique Sousa; Sophie Chevalliez; Philippe Kowalczyk; Mathieu Bernard; Nicolas Bernier; Guillaume Bourgeois; Niccolo Castellani; Pierre Noe; et al. (NVMTS, 2017)