Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. - J. Laguerre; Marc Bocquet; Olivier Billoint; Simon Martin 006; Jean Coignus; Catherine Carabasse; Thomas Magis; T. Dewolf; François Andrieu; Laurent Grenouillet (IMW, 2023)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). - Laurent Grenouillet; Justine Barbot; J. Laguerre; Simon Martin 006; Catherine Carabasse; M. Louro; Messaoud Bedjaoui; S. Minoret; S. Kerdilès; C. Boixaderas; Thomas Magis; Carine Jahan; et al. (IRPS, 2023)

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. - Olivier Billoint; Simon Martin 006; J. Laguerre; L. Hosier; Jean Coignus; Catherine Carabasse; François Andrieu; Laurent Grenouillet (IMW, 2024)

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. - J. Laguerre; Simon Martin 006; Jean Coignus; Catherine Carabasse; Marc Bocquet; François Andrieu; Laurent Grenouillet (IRPS, 2024)

A Novel Design Technique for Enhanced Security and New Applications of Ferroelectric-Based Non-Volatile SRAM. - Lucas Rhetat; Jean-Philippe Noel; Bastien Giraud; Laurent Grenouillet; Julie Laguerre; Cédric Marchand 002; Ian O'Connor (VLSI-SoC, 2024)