OTS selector devices: Material engineering for switching performance. - Marie Claire Cyrille; Anthonin Verdy; Gabriele Navarro; Guillaume Bourgeois; Julien Garrione; Mathieu Bernard; C. Sabbione; Pierre Noe; Etienne Nowak (ICICDT, 2018)

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance. - Anthonin Verdy; Gabriele Navarro; Mathieu Bernard; Sophie Chevalliez; Niccolo Castellani; Emmanuel Nolot; Julien Garrione; Pierre Noe; Guillaume Bourgeois; Veronique Sousa; Marie Claire Cyrille; Etienne Nowak (IRPS, 2018)

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance. - Camille Laguna; Mathieu Bernard; Nicolas Bernier; D. Rouchon; N. Rochat; Julien Garrione; A. Jannaud; Emmanuel Nolot; Valentina Meli; Niccolo Castellani; C. Sabbione; Guillaume Bourgeois; et al. (IMW, 2021)

Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory. - Giusy Lama; Mathieu Bernard; Nicolas Bernier; Guillaume Bourgeois; Emmanuel Nolot; Niccolo Castellani; Julien Garrione; Marie Claire Cyrille; Gabriele Navarro; Etienne Nowak (IRPS, 2021)

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. - Camille Laguna; Mathieu Bernard; Julien Garrione; Niccolo Castellani; Valentina Meli; S. Martin; François Aussenac; D. Rouchon; N. Rochat; Emmanuel Nolot; Guillaume Bourgeois; Marie Claire Cyrille; et al. (ESSDERC, 2022)

TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory. - Giusy Lama; Mathieu Bernard; Julien Garrione; Nicolas Bernier; Niccolo Castellani; Guillaume Bourgeois; Marie Claire Cyrille; François Andrieu; Gabriele Navarro (ESSDERC, 2022)

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. - Gabriele Navarro; C. Sabbione; Valentina Meli; L. E. Nistor; M. Frei; Julien Garrione; M. Tessaire; F. Fillot; Nicolas Bernier; Emmanuel Nolot; Benoit Sklénard; J. Li; et al. (IMW, 2022)