Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory. - Hang-Ah Park; Sejun Park; Min-Tai Yu; Ye-Chan Kim; Cheon Ho Park; Jung Hoon Lee; Jun Eon Jin; Dawoon Jeung; Hauk Han; Tai-Soo Lim; Min-Kyu Jeong; Mincheol Park; et al. (VLSI Technology and Circuits, 2024)