Jun Gyu Lee
Affiliations:- Samsung Electronics, Hwaseong, South Korea
- Hynix Semiconductor, Icheon, South Korea (former)
- Sogang University, Seoul, South Korea (until 2008)
According to our database1,
Jun Gyu Lee
authored at least 6 papers
between 2012 and 2023.
Collaborative distances:
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Bibliography
2023
A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features.
IEEE J. Solid State Circuits, 2023
2022
A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme.
IEEE J. Solid State Circuits, 2021
2020
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2012
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012