11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme. - Shau-Yu Chou; Yu-Shiang Chen; Jun-Hao Chang; Yu-Der Chih; Tsung-Yung Jonathan Chang (ISSCC, 2017)

A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. - Shaun Chou; Gu-Huan Li; Shawn Chen; Jun-Hao Chang; Wan-Hsueh Cheng; Shao-Ding Wu; Philex Fan; Chia-En Huang; Yu-Der Chih; Yih Wang; Jonathan Chang (VLSI Circuits, 2021)