Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. - Jun Tae Jang; Jungi Min; Yeongjin Hwang; Sung-Jin Choi; Dong Myong Kim; Hyungjin Kim 001; Dae Hwan Kim (IEEE Access, 2020)

Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System. - Dongyeon Kang; Jun Tae Jang; Shinyoung Park; Md. Hasan Raza Ansari; Jong-Ho Bae; Sung-Jin Choi; Dong Myong Kim; Changwook Kim; Seongjae Cho; Dae Hwan Kim (IEEE Access, 2021)

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor. - Dongyeon Kang; Wonjung Kim; Jun Tae Jang; Changwook Kim; Jung Nam Kim; Sung-Jin Choi; Jong-Ho Bae; Dong Myong Kim; Yoon Kim; Dae Hwan Kim (IEEE Access, 2023)